Description: Mitsubishi IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM150DY-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts Collector Current IC 150 Amperes Peak Collector Current ICM 300* Amperes Diode Forward Current IF 150 Amperes Diode Forward Surge Current IFM 300* Amperes Power Dissipation Pd 600 Watts Max. Mounting Torque M5 Terminal Screws – 17 in-lb Max. Mounting Torque M6 Mounting Screws – 26 in-lb Module Weight (Typical) – 270 Grams V Isolation VRMS 2500 Volts
